Theory of topological crystalline
at ORAU Workforce Solutions

Date Posted: 5/12/2019

Opportunity Description

Title of Research Opportunity: Theory of topological crystalline insulator based magnetic switching devices and topological phase transitions in semiconductor tin. It has been shown that CdTe/-Sn quantum wells possess a rich variety of topological behaviors. As one increases Sn thickness, CdTe/-Sn transitions through the following phases: 2D trivial insulator, effective 2D topological insulator, 3D topological insulator and 3D Dirac semimetal. Experiments aimed at determining the critical thicknesses of Sn at which these transitions occur will be done. The critical thickness between the 3D topological insulator and Dirac semimetal phases is strongly dependent on the strain of the -Sn layer and the orientation of the CdTe substrate. Theoretical analysis of experimental results are needed to determine the occurrence of topological phase changes. We plan to do the theoretical investigation and realization of topologically mediated voltage con- trolled magnetic anisotropy (TVCMA). We have previously demonstrated ARL’s ability to grow high quality topological insulators (TIs) such as ?-Sn1 and Bi2Te3 via molecular beam epitaxy (MBE). This research will reveal the proximity effect of TI surface states on the easy axis of a ferromagnetic insulator (FMI). In collaboration with Prof. Ki Wook Kim of North Carolina State University, we will experimentally realize the novel TVCMA devices his group conceived in 2012 and 2014. Furthermore, we will extend their theoretical work to include topological crystalline insulators (TCIs). The research opportunity will involve theory of topological crystalline insulator based magnetic switching devices. Keywords: Quantum Wells, Molecular Beam Epitaxy, topological insulator Click here for more information

Opportunity Snapshot

  • Employee Type: Full-Time
  • Location: Adelphi, MD
  • Opportunity Type: Other
  • Experience: Not Specified
  • Date Posted: 5/12/2019

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